STD180N4F6 - STMicroelectronics

Mfr. #:
STD180N4F6
Description:
MOSFET N-channel 40 V, 3.8 mOhm typ., 120 A STripFET F6 Power MOSFET in a DPAK package
Lifecycle:
New from this manufacturer.
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STD180N4F6 Information

STripFET VI™ Power MOSFETs
STMicroelectronics STripFET VI™ Power MOSFETs are enhancement-mode MOSFETs that benefit from STMicroelectronics proprietary STripFET™ technology with a new gate structure. The resulting STripFET™ Power MOSFET uses a trench technology for high efficiency and low RDS(on) required by various automotive and industrial switching applications such as motor control, UPS, DC/DC converters, induction heater vaporizers and solar. They have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density.
STripFET Power MOSFETs
STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET™ technology with a new gate structure. The resulting STripFET™ Power MOSFET exhibits the high current and low RDS(on) required by automotive and industrial switching applications such as motor control, UPS, DC/DC converters, induction heater vaporizers and solar. STMicroelectronics STripFET™ Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses and high power density. These STripFET™ Power MOSFETs offer among the industry's lowest RDS(on) 30V-150V power MOSFETs in the market.
STMicroelectronics STripFET VI Power MOSFETs

Specifications

RoHS: Y
Package / Case: TO-252-3
Configuration: Single
Technology: Si
Tradename: STripFET
Manufacturer: STMicroelectronics
Brand: STMicroelectronics
Series: STD180N4F6
Mounting Style: SMD/SMT
Packaging: Reel
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Category: MOSFET
Product Type: MOSFET
Channel Mode: Enhancement
Id - Continuous Drain Current: 80 A
Fall Time: 57 ns
Vds - Drain-Source Breakdown Voltage: 40 V
Vgs th - Gate-Source Threshold Voltage: 3 V
Factory Pack Quantity: 2500
Typical Turn-On Delay Time: 24 ns
Vgs - Gate-Source Voltage: 20 V
Rds On - Drain-Source Resistance: 2.5 mOhms
Rise Time: 150 ns
Qg - Gate Charge: 130 nC
Pd - Power Dissipation: 130 W
Typical Turn-Off Delay Time: 106 ns
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Unit Weight: 0.011993 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C

STD180N4F6 Price & Stock

STMicroelectronics STD180N4F6 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-Key 2497-16938-1-ND2,26312.5111.248.275.945.942020-02-14T18:00:26Z
Digi-Key497-16938-6-ND2,26312.5111.248.275.945.942020-02-14T18:00:26Z
Mouser511-STD180N4F61,61812.1210.338.235.975.562020-02-14T21:44:59Z
AvnetSTD180N4F6-----5.622020-02-15T01:29:31Z
Newark20AC4153-----5.152020-02-07T03:53:04Z
LTL Group45081761,410-----2020-02-13T07:12:16Z
Sierra ICSTD180N4F6Contact-----2019-12-16T00:48:56Z

Alternate Names

STMicroelectronics has several brands around the world that may have alternate names for STD180N4F6 due to regional differences or acquisition. STD180N4F6 may also be known as the following names:

  • ST MICRO STD180N4F6
  • STM STD180N4F6
  • SGS STD180N4F6
  • SGS THOMSON STD180N4F6
  • INMOS STD180N4F6
  • SGS THOMPSON STD180N4F6
  • STMICROE STD180N4F6
  • STMICR STD180N4F6
  • SESCOSEM STD180N4F6
  • ST8 STD180N4F6
  • ST MIC STD180N4F6
  • WAFERSCALE STD180N4F6
  • SGS-ATES STD180N4F6
  • STMICROELECTRON STD180N4F6
  • ST MICROELECTRONICS SEMI STD180N4F6
  • ST/SGS STD180N4F6
  • SGST STD180N4F6
  • THOMS STD180N4F6
  • STMICROELECT STD180N4F6
  • WAFERSCALE INTEGRATION INC STD180N4F6
  • STMICROEL STD180N4F6
  • SGS-Thomson Microelectronics STD180N4F6
  • ST MICROELECTRO STD180N4F6
  • SGS THOMP STD180N4F6
  • SGS/ST STD180N4F6
  • ST Microeletronics STD180N4F6