Mfr. #:
QPD2730
Description:
RF JFET Transistors 2.575-2.635GHz 48V 110/220 Watt GaN
Lifecycle:
New from this manufacturer.
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QPD2730 Information

QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

Specifications

Moisture Sensitive: Yes
RoHS: Y
Packaging: Waffle
Subcategory: Transistors
Mounting Style: SMD/SMT
Product Category: RF JFET Transistors
Product Type: RF JFET Transistors
Brand: Qorvo
Manufacturer: Qorvo
Series: QPD
Package / Case: NI780-4
Transistor Polarity: N-Channel
Transistor Type: HEMT
Technology: GaN SiC
Configuration: Dual
Maximum Drain Gate Voltage: 55 V
Vds - Drain-Source Breakdown Voltage: 48 V
Output Power: 36 W
Factory Pack Quantity: 25
Id - Continuous Drain Current: 210 mA
Operating Frequency: 2.575 GHz to 2.635 GHz
Pd - Power Dissipation: 18.6 W
Gain: 16 dB
Part # Aliases: 1131813
Operating Temperature Range: - 40 C to + 85 C
Minimum Operating Temperature: - 40 C
Vgs th - Gate-Source Threshold Voltage: - 2.7 V, - 4.75 V
Maximum Operating Temperature: + 85 C

QPD2730 Price & Stock

Qorvo QPD2730 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Mouser772-QPD273021236.36236.36206.27206.27206.272020-03-17T00:28:55Z
RFMWQPD2730-236.36236.36171.90163.30163.302020-03-17T08:38:18Z

Alternate Names

Qorvo has several brands around the world that may have alternate names for QPD2730 due to regional differences or acquisition. QPD2730 may also be known as the following names:

  • QORVO INC QPD2730
  • Qorvo / TriQuint Semiconductor QPD2730