SI8499DB-T2-E1 - Vishay / Siliconix

Mfr. #:
SI8499DB-T2-E1
Description:
MOSFET -20V Vds 12V Vgs MICRO FOOT 1.5 x 1
Lifecycle:
New from this manufacturer.
Delivery
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Purchase SI8499DB-T2-E1

SI8499DB-T2-E1 Information

MicroFoot® Power MOSFETs
Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (RDS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The devices' low on-resistance also means a lower voltage drop across the load switch to prevent unwanted under-voltage lockout.Learn More
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET® P-Channel MOSFETs
Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.

Specifications

RoHS: Y
Brand: Vishay / Siliconix
Manufacturer: Vishay
Tradename: TrenchFET
Configuration: Single
Technology: Si
Mounting Style: SMD/SMT
Series: SI8
Packaging: Reel
Transistor Polarity: P-Channel
Package / Case: MicroFoot-6
Subcategory: MOSFETs
Product Type: MOSFET
Product Category: MOSFET
Channel Mode: Enhancement
Typical Turn-Off Delay Time: 50 ns
Factory Pack Quantity: 3000
Fall Time: 30 ns
Qg - Gate Charge: 30 nC
Rds On - Drain-Source Resistance: 26 mOhms
Rise Time: 25 ns
Typical Turn-On Delay Time: 20 ns
Vds - Drain-Source Breakdown Voltage: 20 V
Id - Continuous Drain Current: 16 A
Pd - Power Dissipation: 13 W
Vgs - Gate-Source Voltage: 12 V
Forward Transconductance - Min: 10 S
Vgs th - Gate-Source Threshold Voltage: 1.3 V
Transistor Type: 1 P-Channel
Number of Channels: 1 Channel
Unit Weight: 0.004233 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

SI8499DB-T2-E1 Price & Stock

Vishay SI8499DB-T2-E1 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-Key 3SI8499DB-T2-E1CT-ND11,0494.603.962.741.741.742020-04-30T13:02:54Z
Digi-KeySI8499DB-T2-E1DKR-ND11,0494.603.962.741.741.742020-04-30T13:02:54Z
Digi-KeySI8499DB-T2-E1TR-ND9,000----1.482020-04-30T13:02:54Z
Mouser781-SI8499DB-T2-E18254.103.582.751.731.632020-04-29T21:04:59Z
AvnetSI8499DB-T2-E1-----1.502020-04-25T01:29:48Z
TTISI8499DB-T2-E1------2020-05-01T06:24:16Z
Newark 269W7243-----1.822020-05-01T03:15:23Z
Newark86R3935-----1.632020-05-01T03:15:23Z
Avnet EuropeSI8499DB-T2-E19,000----1.962020-05-01T07:11:44Z
AGS DevicesSI8499DB-T2-E119,717-----2020-03-25T15:42:39Z
NetroFlashSI8499DB-T2-E1567-----2020-04-23T18:17:58Z
NAC SemiXSKDRABV00501946,000----1.702020-04-30T17:35:02Z
QuestSI8499DB-T2-E11,6582.552.551.701.191.062020-05-01T10:26:11Z
Component ElectronicsSI8499DB-T2-E1105.445.445.445.445.442020-04-22T20:15:55Z
Bison Technologies 2SI8499DB-T2-E1-191806-VISHAY255,210-----2020-04-07T15:20:25Z
Bison TechnologiesSI8499DB-T2-E1-143627-VISHAY560-----2020-04-07T15:20:25Z
OMO Electronics32305066,640---1.271.072020-04-20T06:08:58Z
Classic ComponentsSI8499DB-T2-E12,310-----2020-04-17T15:46:26Z
Abacus TechnologiesSI8499DB-T2-E120,328-----2020-04-30T19:09:09Z
North Star MicroSI8499DB-T2-E1Contact-----2015-05-20T05:52:12Z

Alternate Names

Vishay has several brands around the world that may have alternate names for SI8499DB-T2-E1 due to regional differences or acquisition. SI8499DB-T2-E1 may also be known as the following names:

  • VIS SI8499DB-T2-E1
  • VISH SI8499DB-T2-E1
  • VISHAY INTERTECHNOLOGY INC SI8499DB-T2-E1
  • VISHA SI8499DB-T2-E1
  • VISHAY THIN FILM SI8499DB-T2-E1
  • VISHAY INTERTECHNOLOGY SI8499DB-T2-E1
  • VISHY SI8499DB-T2-E1
  • VISAHY SI8499DB-T2-E1
  • VISH/IR SI8499DB-T2-E1
  • VSHY SI8499DB-T2-E1
  • VSH SI8499DB-T2-E1
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD SI8499DB-T2-E1
  • VISHAY ELECTRONIC SI8499DB-T2-E1
  • VSHAY SI8499DB-T2-E1
  • VISHAY FOIL RESISTORS SI8499DB-T2-E1
  • VISHAY AMERICAS INC SI8499DB-T2-E1
  • VISHAY INTERTECHNOLOGY ASIA PT SI8499DB-T2-E1
  • VISHAY AMERICAS SI8499DB-T2-E1
  • VISHAY ELECTRO-FILMS SI8499DB-T2-E1
  • VISHAY COMPONENTS SI8499DB-T2-E1
  • Vishay Semiconductors SI8499DB-T2-E1
  • VISHAY COMPONENTS NEDERLAND SI8499DB-T2-E1
  • VISHAY INTERTEC SI8499DB-T2-E1
  • VISHAY FOIL RESISTORS / VPG SI8499DB-T2-E1
  • VISHAY OPTO SI8499DB-T2-E1
  • Vishay Intertechnology Inc. SI8499DB-T2-E1