IKZ50N65EH5XKSA1 - Infineon Technologies

Mfr. #:
IKZ50N65EH5XKSA1
Description:
IGBT Transistors IGBT PRODUCTS
Lifecycle:
New from this manufacturer.
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IKZ50N65EH5XKSA1 Information

TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
Home Appliance Solutions
Infineon Home Appliance Solutions offer a range of products for low power drive in-home appliance applications. These devices meet and exceed the most rigorous requirements for reliability, quality, security and energy efficiency. Included in this portfolio are RC-Drives IGBTs, fast IGBTs, discrete IGBTs, rapid diodes, gate driver ICs, microcontrollers: XMC™ and iMotion™, IPM: CIPOS™ and IRAM.Learn More
TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs
Infineon TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs are high speed and designed with ultimate efficiency for applications switching faster than 30kHz. The High Speed 5 IGBTs feature TRENCHSTOP™ 5 technology and are co-packed with a RAPID 1 fast and soft antiparallel diode. The H5 IGBTs offer best-in-class efficiency in hard switching and resonant topologies and are a plug-and-play replacement for previous generation IGBTs. Typical applications include UPS, welding converters, solar string inverters, and mid to high range switching frequency converters.

Specifications

RoHS: Y
Packaging: Tube
Mounting Style: Through Hole
Series: TRENCHSTOP 5 H5
Tradename: TRENCHSTOP
Package / Case: TO-247-4
Configuration: Single
Technology: Si
Brand: Infineon Technologies
Manufacturer: Infineon
Part # Aliases: IKZ50N65EH5 SP001160038
Subcategory: IGBTs
Product Type: IGBT Transistors
Product Category: IGBT Transistors
Continuous Collector Current at 25 C: 85 A
Collector- Emitter Voltage VCEO Max: 650 V
Width: 5.31 mm
Pd - Power Dissipation: 273 W
Factory Pack Quantity: 240
Height: 20.7 mm
Maximum Gate Emitter Voltage: 20 V
Length: 15.87 mm
Gate-Emitter Leakage Current: 100 nA
Collector-Emitter Saturation Voltage: 1.65 V
Unit Weight: 0.053885 oz
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 175 C

IKZ50N65EH5XKSA1 Price & Stock

Infineon IKZ50N65EH5XKSA1 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-KeyIKZ50N65EH5XKSA1-ND11846.1441.6932.9626.1825.212020-03-09T12:56:07Z
Mouser726-IKZ50N65EH5XKSA140546.0741.7034.4830.0430.042020-03-09T23:21:00Z
element14 APAC270998333048.5643.9536.3531.6731.672020-03-10T01:52:59Z
VericalIKZ50N65EH5XKSA15,280---31.8231.822020-03-09T17:49:37Z
AvnetIKZ50N65EH5XKSA1----25.9524.632020-03-07T03:02:58Z
Farnell270998333013.3213.3213.3213.3213.322020-03-07T03:21:14Z
SchukatIKZ50N65EH524054.7130.9922.2922.2922.292020-03-09T08:06:02Z
Newark12AC9681-46.0741.7034.4829.6929.692020-03-09T14:53:29Z
Avnet EuropeSP001160038-32.0728.8625.9825.9825.982020-03-09T08:04:27Z
Hamilton AmericasIKZ50N65EH5XKSA112,567-----2020-03-03T22:15:55Z
LTL Group4043324800-----2020-03-06T07:59:49Z
EurotronikIKZ50N65EH5240-----2020-01-15T15:20:56Z
TMEIKZ50N65EH51934.1328.5826.5726.5726.572020-03-09T10:30:53Z
NexxonIKZ50N65EH5XKSA1Contact-----2018-02-27T00:44:39Z

Alternate Names

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