SIHB22N60AE-GE3 - Vishay / Siliconix

Mfr. #:
SIHB22N60AE-GE3
Description:
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
Lifecycle:
New from this manufacturer.
Delivery
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SIHB22N60AE-GE3 Information

Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Specifications

RoHS: Y
Brand: Vishay / Siliconix
Manufacturer: Vishay
Packaging: Tube
Package / Case: TO-263-3
Configuration: Single
Technology: Si
Mounting Style: SMD/SMT
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Type: MOSFET
Product Category: MOSFET
Channel Mode: Enhancement
Series: E
Vds - Drain-Source Breakdown Voltage: 650 V
Qg - Gate Charge: 48 nC
Typical Turn-Off Delay Time: 45 ns
Vgs th - Gate-Source Threshold Voltage: 4 V
Rise Time: 33 ns
Vgs - Gate-Source Voltage: 30 V
Fall Time: 21 ns
Id - Continuous Drain Current: 20 A
Typical Turn-On Delay Time: 19 ns
Pd - Power Dissipation: 179 W
Rds On - Drain-Source Resistance: 156 mOhms
Factory Pack Quantity: 1000
Number of Channels: 1 Channel
Unit Weight: 0.077603 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

SIHB22N60AE-GE3 Price & Stock

Vishay SIHB22N60AE-GE3 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-KeySIHB22N60AE-GE3-ND1,00026.1123.4617.7413.5012.122020-03-21T13:09:08Z
Mouser78-SIHB22N60AE-GE31,00027.3222.9919.3714.0514.052020-03-20T21:39:50Z
AvnetSIHB22N60AE-GE3----14.3512.642020-03-21T01:42:32Z
TTISIHB22N60AE-GE3------2020-03-21T07:31:07Z
Newark20AC3797----13.5512.562020-03-21T02:43:48Z
SourceabilitySIHB22N60AE-GE31,000-----2020-03-03T19:24:07Z

Alternate Names

Vishay has several brands around the world that may have alternate names for SIHB22N60AE-GE3 due to regional differences or acquisition. SIHB22N60AE-GE3 may also be known as the following names:

  • VIS SIHB22N60AE-GE3
  • VISH SIHB22N60AE-GE3
  • VISHAY INTERTECHNOLOGY INC SIHB22N60AE-GE3
  • VISHA SIHB22N60AE-GE3
  • VISHAY THIN FILM SIHB22N60AE-GE3
  • VISHAY INTERTECHNOLOGY SIHB22N60AE-GE3
  • VISHY SIHB22N60AE-GE3
  • VISAHY SIHB22N60AE-GE3
  • VISH/IR SIHB22N60AE-GE3
  • VSHY SIHB22N60AE-GE3
  • VSH SIHB22N60AE-GE3
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD SIHB22N60AE-GE3
  • VISHAY ELECTRONIC SIHB22N60AE-GE3
  • VSHAY SIHB22N60AE-GE3
  • VISHAY FOIL RESISTORS SIHB22N60AE-GE3
  • VISHAY AMERICAS INC SIHB22N60AE-GE3
  • VISHAY INTERTECHNOLOGY ASIA PT SIHB22N60AE-GE3
  • VISHAY AMERICAS SIHB22N60AE-GE3
  • VISHAY ELECTRO-FILMS SIHB22N60AE-GE3
  • VISHAY COMPONENTS SIHB22N60AE-GE3
  • Vishay Semiconductors SIHB22N60AE-GE3
  • VISHAY COMPONENTS NEDERLAND SIHB22N60AE-GE3
  • VISHAY INTERTEC SIHB22N60AE-GE3
  • VISHAY FOIL RESISTORS / VPG SIHB22N60AE-GE3
  • VISHAY OPTO SIHB22N60AE-GE3
  • Vishay Intertechnology Inc. SIHB22N60AE-GE3