DMG302PU-13 - Diodes Incorporated

Mfr. #:
DMG302PU-13
Description:
MOSFET 25V P-Ch Enh Mode FET -8Vgss 0.33W
Lifecycle:
New from this manufacturer.
Delivery
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Payment
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DMG302PU-13 Information

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Specifications

RoHS: Y
Configuration: Single
Technology: Si
Package / Case: SOT-23-3
Mounting Style: SMD/SMT
Packaging: Reel
Transistor Polarity: P-Channel
Subcategory: MOSFETs
Product Category: MOSFET
Product Type: MOSFET
Channel Mode: Enhancement
Brand: Diodes Incorporated
Manufacturer: Diodes Incorporated
Series: DMG302
Vgs th - Gate-Source Threshold Voltage: 960 mV
Vgs - Gate-Source Voltage: 8 V
Pd - Power Dissipation: 450 mW
Typical Turn-On Delay Time: 4.5 ns
Qg - Gate Charge: 350 pC
Vds - Drain-Source Breakdown Voltage: 25 V
Typical Turn-Off Delay Time: 24.1 ns
Rise Time: 2.3 ns
Id - Continuous Drain Current: 17 A
Rds On - Drain-Source Resistance: 13 Ohms
Fall Time: 11 ns
Factory Pack Quantity: 10000
Transistor Type: 1 P-Channel
Number of Channels: 1 Channel
Unit Weight: 0.000282 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

DMG302PU-13 Price & Stock

Diodes Inc. DMG302PU-13 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-KeyDMG302PU-13DITR-ND-----0.7332019-10-29T12:35:07Z
AvnetDMG302PU-13-----0.6312019-11-02T04:41:25Z
Avnet EuropeDMG302PU-13-----1.592019-11-04T07:46:46Z

Alternate Names

Diodes Inc. has several brands around the world that may have alternate names for DMG302PU-13 due to regional differences or acquisition. DMG302PU-13 may also be known as the following names:

  • DIODES INCORPORATED DMG302PU-13
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