- Mfr. #:
- STH130N8F7-2
- Description:
- MOSFET N-channel 80 V, 4.2 mOhm typ., 110 A STripFET F7 Power MOSFET in an H2PAK-2 package
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
STH130N8F7-2 Information
- STripFET Power MOSFETs
- STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET™ technology with a new gate structure. The resulting STripFET™ Power MOSFET exhibits the high current and low RDS(on) required by automotive and industrial switching applications such as motor control, UPS, DC/DC converters, induction heater vaporizers and solar. STMicroelectronics STripFET™ Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses and high power density. These STripFET™ Power MOSFETs offer among the industry's lowest RDS(on) 30V-150V power MOSFETs in the market.
- Standard Products
- STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
- STMicroelectronics STripFET VII Power MOSFETs
Specifications
RoHS: | Y |
---|---|
Configuration: | Single |
Technology: | Si |
Tradename: | STripFET |
Manufacturer: | STMicroelectronics |
Brand: | STMicroelectronics |
Series: | STH130N8F7-2 |
Mounting Style: | SMD/SMT |
Transistor Polarity: | N-Channel |
Subcategory: | MOSFETs |
Product Category: | MOSFET |
Product Type: | MOSFET |
Package / Case: | H2PAK-2 |
Channel Mode: | Enhancement |
Vds - Drain-Source Breakdown Voltage: | 80 V |
Qg - Gate Charge: | 60 nC |
Rds On - Drain-Source Resistance: | 4.2 mOhms |
Rise Time: | 210 ns |
Pd - Power Dissipation: | 205 W |
Vgs - Gate-Source Voltage: | 20 V |
Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
Typical Turn-Off Delay Time: | 190 ns |
Typical Turn-On Delay Time: | 140 ns |
Fall Time: | 120 ns |
Id - Continuous Drain Current: | 110 A |
Factory Pack Quantity: | 1000 |
Transistor Type: | 1 N-Channel |
Number of Channels: | 1 Channel |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 175 C |
STH130N8F7-2 Price & Stock
STMicroelectronics STH130N8F7-2 pricing and available inventory.
Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
---|---|---|---|---|---|---|---|---|
Digi-Key | STH130N8F7-2-ND | - | - | - | - | 6.23 | 6.23 | 2020-04-30T13:02:54Z |
Avnet | STH130N8F7-2 | - | - | - | - | 6.81 | 5.92 | 2020-04-25T01:29:48Z |
Mouser | 511-STH130N8F7-2 | - | 13.07 | 11.09 | 8.69 | 6.23 | 6.23 | 2020-04-29T21:04:59Z |
Avnet Europe | STH130N8F7-2 | - | - | - | - | - | 8.21 | 2020-05-01T07:11:44Z |
Newark | 20AC4229 | - | - | - | - | - | - | 2020-05-01T03:15:23Z |
LTL Group | 4510133 | 1,599 | - | - | - | - | - | 2020-04-30T06:23:24Z |
Alternate Names
STMicroelectronics has several brands around the world that may have alternate names for STH130N8F7-2 due to regional differences or acquisition. STH130N8F7-2 may also be known as the following names:
- ST MICRO STH130N8F7-2
- STM STH130N8F7-2
- SGS STH130N8F7-2
- SGS THOMSON STH130N8F7-2
- INMOS STH130N8F7-2
- SGS THOMPSON STH130N8F7-2
- STMICROE STH130N8F7-2
- STMICR STH130N8F7-2
- SESCOSEM STH130N8F7-2
- ST8 STH130N8F7-2
- ST MIC STH130N8F7-2
- WAFERSCALE STH130N8F7-2
- SGS-ATES STH130N8F7-2
- STMICROELECTRON STH130N8F7-2
- ST MICROELECTRONICS SEMI STH130N8F7-2
- ST/SGS STH130N8F7-2
- SGST STH130N8F7-2
- THOMS STH130N8F7-2
- STMICROELECT STH130N8F7-2
- WAFERSCALE INTEGRATION INC STH130N8F7-2
- STMICROEL STH130N8F7-2
- SGS-Thomson Microelectronics STH130N8F7-2
- ST MICROELECTRO STH130N8F7-2
- SGS THOMP STH130N8F7-2
- SGS/ST STH130N8F7-2
- ST Microeletronics STH130N8F7-2