LMG1205YFXR Information

LMG1205 Half-Bridge Gate Driver

Texas Instruments LMG1205 Half-Bridge Gate Driver is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck, boost, or half-bridge configuration. The device has an integrated 100V bootstrap diode and independent inputs for the high-side and low-side outputs for maximum control flexibility. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5V. This feature prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LMG1205 are TTL logic compatible and can withstand input voltages up to 14V regardless of the VDD voltage. The LMG1205 has split-gate outputs which provide flexibility to adjust the turn-on and turn-off strength independently.

Gallium Nitride (GaN)

Texas Instruments Gallium Nitride (GaN) solutions deliver high-efficiency, power density, and reliability. The Texas Instruments GaN portfolio consists of controllers, drivers, and regulators that offer reduced power with end-to-end power conversion and 5MHz switching frequencies.

Specifications

LMG1205YFXR Price & Stock

Texas Instruments LMG1205YFXR pricing and available inventory.

Alternate Names

Texas Instruments has several brands around the world that may have alternate names for LMG1205YFXR due to regional differences or acquisition. LMG1205YFXR may also be known as the following names: