IXTN600N04T2 Information

GigaMOS™ TrenchT2™ Power MOSFETs

IXYS GigaMOS™ TrenchT2™ standard and HiPerFET™ Power MOSFETs are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600A (Tc=@25ºC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. These new IXYS GigaMOS Power MOSFETs incorporate IXYS TrenchT2 Technology, allowing for improved channel density while achieving lower on-state resistance and gate charge to facilitate energy-efficient switching at high speeds. These IXYS GigaMOS TrenchT2 Power MOSFETs eliminate multiple paralleled lower current rated MOSFET devices and provide the ability to control more power within a smaller footprint. These devices are designed for use in a wide range of applications, including synchronous rectification, DC-DC converter, battery charger, and switch-mode and resonant-mode power supplies.

Specifications

IXTN600N04T2 Price & Stock

IXYS IXTN600N04T2 pricing and available inventory.

Alternate Names

IXYS has several brands around the world that may have alternate names for IXTN600N04T2 due to regional differences or acquisition. IXTN600N04T2 may also be known as the following names: