PGA26E07BA Information

PGA26E X-GaN Power Transistors

Panasonic PGA26E07BA and PGA26E19BA X-GaN Power Transistors are 600V Gallium Nitride power devices based on Gate Injection Transistor (GiT) technology. PGA26E X-GaN power devices deliver Normally-Off operation with extremely high-speed switching characteristics and zero recovery loss.

X-GaN Power Solutions

Panasonic 600V Gallium Nitride (X-GaN) is a very hard, mechanically stable wide bandgap semiconductor material with high heat capacity and thermal conductivity. In its pure form, it resists cracking and can be deposited in a thin film on Sapphire (AL2O3) or Silicon Carbide (SiC), despite the mismatch in their lattice constants. X-GaN can be doped with Silicon (Si) or with Oxygen to n-type and with Magnesium (Mg) to p-type; however, the Si and Mg atoms change the way the X-GaN crystals grow, introducing tensile stresses and making them brittle.

Specifications

PGA26E07BA Price & Stock

Panasonic PGA26E07BA pricing and available inventory.

Alternate Names

Panasonic has several brands around the world that may have alternate names for PGA26E07BA due to regional differences or acquisition. PGA26E07BA may also be known as the following names: