BSM100GB120DN2 - Infineon Technologies

Mfr. #:
BSM100GB120DN2
Description:
IGBT Modules 1200V 100A DUAL
Lifecycle:
New from this manufacturer.
Delivery
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BSM100GB120DN2 Information

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Specifications

RoHS: Y
Packaging: Tray
Brand: Infineon Technologies
Manufacturer: Infineon
Subcategory: IGBTs
Product: IGBT Silicon Modules
Product Category: IGBT Modules
Product Type: IGBT Modules
Package / Case: Half Bridge2
Configuration: Half Bridge
Mounting Style: Chassis Mount
Part # Aliases: BSM100GB120DN2HOSA1 SP000100720
Pd - Power Dissipation: 800 W
Width: 61.4 mm
Height: 30 mm
Gate-Emitter Leakage Current: 200 nA
Maximum Gate Emitter Voltage: 20 V
Collector-Emitter Saturation Voltage: 2.5 V
Continuous Collector Current at 25 C: 150 A
Collector- Emitter Voltage VCEO Max: 1200 V
Length: 106.4 mm
Factory Pack Quantity: 10
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 150 C

BSM100GB120DN2 Price & Stock

Infineon BSM100GB120DN2 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Mouser641-BSM100GB120DN2451013.12946.90927.02927.02927.022020-03-06T23:28:26Z
USComponentBSM100GB120DN235-----2020-02-24T22:32:38Z
Classic ComponentsBSM100GB120DN27-----2020-03-07T00:33:00Z
Abacus TechnologiesBSM100GB120DN2400-----2020-02-24T20:07:32Z
NexxonBSM100GB120DN2Contact-----2018-02-27T00:44:39Z

Alternate Names

Infineon has several brands around the world that may have alternate names for BSM100GB120DN2 due to regional differences or acquisition. BSM100GB120DN2 may also be known as the following names:

  • Infineon Technologies BSM100GB120DN2
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  • INFINEON/SIEMENS BSM100GB120DN2
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