- Mfr. #:
- FDBL0260N100
- Description:
- MOSFET N-Channel Power Trench MOSFET
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
FDBL0260N100 Information
- N-Channel PowerTrench® MOSFETs
- ON Semiconductor N-Channel PowerTrench® MOSFETs are produced using advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. ON Semiconductor N-Channel PowerTrench® MOSFETs are available in a variety of Drain to Source Voltage specifications, from 30V to 250V.The FDD10N20LZ and FDD7N25LZ are N-Channel enhancement mode power field effect transistors that are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.The FDMC6296 is a single N-Channel MOSFET in a thermally efficient MicroFET Package that has been specifically designed to perform well in Point of Load converters. Providing an optimized balance between rDS(on) and gate charge this device can be effectively used as a "high side" control swtich or "low side" synchronous rectifier.Learn more
Specifications
RoHS: | Y |
---|---|
Configuration: | Single |
Technology: | Si |
Mounting Style: | SMD/SMT |
Packaging: | Reel |
Tradename: | PowerTrench |
Brand: | ON Semiconductor / Fairchild |
Manufacturer: | ON Semiconductor |
Transistor Polarity: | N-Channel |
Subcategory: | MOSFETs |
Product Type: | MOSFET |
Product Category: | MOSFET |
Package / Case: | H-PSOF-8 |
Series: | FDBL0260N100 |
Channel Mode: | Enhancement |
Width: | 9.9 mm |
Qg - Gate Charge: | 83 nC |
Typical Turn-Off Delay Time: | 47 ns |
Rise Time: | 34 ns |
Typical Turn-On Delay Time: | 26 ns |
Pd - Power Dissipation: | 250 W |
Factory Pack Quantity: | 2000 |
Id - Continuous Drain Current: | 200 A |
Vgs - Gate-Source Voltage: | 20 V |
Rds On - Drain-Source Resistance: | 2.6 mOhms |
Height: | 2.4 mm |
Vgs th - Gate-Source Threshold Voltage: | 2 V |
Fall Time: | 19 ns |
Forward Transconductance - Min: | 170 S |
Vds - Drain-Source Breakdown Voltage: | 100 V |
Length: | 10.48 mm |
Transistor Type: | 1 N-Channel |
Number of Channels: | 1 Channel |
Unit Weight: | 0.029985 oz |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
FDBL0260N100 Price & Stock
ON Semiconductor FDBL0260N100 pricing and available inventory.
Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
---|---|---|---|---|---|---|---|---|
Mouser | 512-FDBL0260N100 | 3,094 | 38.43 | 32.69 | 28.34 | 20.34 | 20.34 | 2020-02-07T21:39:29Z |
element14 APAC | 2825149 | 815 | 43.65 | 37.12 | 32.19 | 23.10 | 21.07 | 2020-02-08T02:24:45Z |
Digi-Key | FDBL0260N100TR-ND | - | - | - | - | - | 19.62 | 2020-02-07T15:59:58Z |
Avnet | FDBL0260N100 | - | - | - | - | - | - | 2020-02-08T03:44:22Z |
Farnell | 2825149 | 819 | 38.64 | 32.83 | 28.43 | 20.42 | 19.42 | 2020-02-07T02:52:17Z |
Farnell | 2825149RL | - | - | 32.83 | 28.43 | 20.42 | 19.42 | 2020-02-07T02:52:17Z |
Newark | 46AC0758 | 815 | 38.43 | 32.69 | 28.34 | 20.34 | 20.34 | 2020-02-07T03:53:04Z |
Avnet Europe | FDBL0260N100 | - | - | - | - | - | 22.52 | 2020-02-09T07:53:18Z |
Sourceability | FDBL0260N100 | 12,550 | - | - | - | - | - | 2020-02-05T14:31:10Z |
GreenTree Electronics | FDBL0260N100 | 12,550 | - | - | - | - | - | 2020-01-16T13:11:16Z |
Abacus Technologies | FDBL0260N100 | 12,196 | - | - | - | - | - | 2019-12-06T00:07:36Z |
Nexxon | FDBL0260N100 | Contact | - | - | - | - | - | 2018-02-27T00:44:39Z |
Sierra IC | FDBL0260N100 | Contact | - | - | - | - | - | 2019-12-16T00:48:56Z |
Alternate Names
ON Semiconductor has several brands around the world that may have alternate names for FDBL0260N100 due to regional differences or acquisition. FDBL0260N100 may also be known as the following names:
- ON SEMI FDBL0260N100
- ONS FDBL0260N100
- ON SEM FDBL0260N100
- ONSEMICON FDBL0260N100
- ON SEMICONDUCTO FDBL0260N100
- ON SEMICONDUCTORS FDBL0260N100
- OSC FDBL0260N100
- ONSEMIC FDBL0260N100
- ONSE FDBL0260N100
- SCG FDBL0260N100
- ON SEMICONDU FDBL0260N100
- ON SEMICONDUCTOR COR FDBL0260N100
- ONSM FDBL0260N100
- ON SEMICOND FDBL0260N100
- ON SEMICO FDBL0260N100
- ON SEMICONDUCTOR/FAIRCHILD FDBL0260N100
- MOT/ON SEMI FDBL0260N100
- ON SEMICONDUCTOR CORPORATION FDBL0260N100
- ON4 FDBL0260N100
- ON SEMICONDUCTOR CORP FDBL0260N100
- Fairchild (ON Semiconductor) FDBL0260N100
- ON-SEMI SCG FDBL0260N100
- ON SEMICONDUTOR FDBL0260N100
- ON/PBF FDBL0260N100
- ON SEMICONDUCTOR (VA) FDBL0260N100
- ON Semiconductor Inc. FDBL0260N100
- onsemiconductor FDBL0260N100