Mfr. #:
CGH09120F
Description:
RF JFET Transistors GaN HEMT UHF-2.5GHz, 120 Watt
Lifecycle:
New from this manufacturer.
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CGH09120F Information

CGH09120F GaN High Electron Mobility Transistor
Wolfspeed / Cree CGH09120F GaN High Electron Mobility Transistor (HEMT) is designed for high efficiency, high gain and wide bandwidth capabilities. This GaN HEMT allows for a high degree of DPD Correction to be applied making it ideal for MC-GSM, WCDMA and LTE amplifier applications. The transistor is housed in a ceramic/metal flange package.Learn More

Specifications

RoHS: Y
Brand: Wolfspeed / Cree
Packaging: Tray
Subcategory: Transistors
Application: Telecom
Configuration: Single
Mounting Style: Screw Mount
Product Type: RF JFET Transistors
Product Category: RF JFET Transistors
Transistor Polarity: N-Channel
Transistor Type: HEMT
Technology: GaN
Manufacturer: Cree, Inc.
Operating Frequency: 910 MHz
Pd - Power Dissipation: 56 W
Factory Pack Quantity: 50
NF - Noise Figure: 3 dB
Maximum Drain Gate Voltage: 28 V
Id - Continuous Drain Current: 28 A
Gain: 21 dB
Output Power: 20 W
Vds - Drain-Source Breakdown Voltage: 120 V
Operating Temperature Range: - 40 C to + 150 C
Minimum Operating Temperature: - 40 C
Vgs th - Gate-Source Threshold Voltage: - 3 V
Vgs - Gate-Source Breakdown Voltage: - 10 V, 2 V
Maximum Operating Temperature: + 150 C

CGH09120F Price & Stock

Wolfspeed CGH09120F pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-KeyCGH09120F-ND911759.571759.571759.571759.571759.572019-12-16T13:48:31Z
Richardson RFPDCGH09120F-1761.901761.901761.901761.901761.902019-12-17T02:23:57Z

Alternate Names

Wolfspeed has several brands around the world that may have alternate names for CGH09120F due to regional differences or acquisition. CGH09120F may also be known as the following names: