SIE808DF-T1-E3 Information

SIE808DF / SI7866ADP TrenchFET Power MOSFETs

Vishay Silconix TrenchFET® power MOSFET features 20V drain-to-source and gate-to-source voltage ratings and offers on-resistance specifications as low as 1.6mΩ in SO-8 footprint area. The MOSFET offers higher efficiency for reduced power consumption and prolonged battery life in end-systems and an extremely low Qgd/Qgs ratio that provides substantial shoot-thru protection. The MOSFET is ideal for OR-ing applications.

N-Channel PolarPAK® Power MOSFETs

Vishay Siliconix 20V to 75V PolarPAK® Power MOSFETs combine the thermal benefits of a double-sided cooling package with on-resistance down to as low as 1.4mΩ. The double-sided cooling provided by these Vishay Siliconix PolarPAK® Power MOSFETs gives designers a way to reduce system size and cost through better MOSFET thermal performance. These Vishay Siliconix PolarPAK® MOSFETs share the same footprint area as the standard SO-8 yet are twice as thin with a height profile of just 0.8 mm.

Specifications

SIE808DF-T1-E3 Price & Stock

Vishay SIE808DF-T1-E3 pricing and available inventory.

Alternate Names

Vishay has several brands around the world that may have alternate names for SIE808DF-T1-E3 due to regional differences or acquisition. SIE808DF-T1-E3 may also be known as the following names: