- Mfr. #:
- IXFH36N60P
- Description:
- MOSFET 600V 36A
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
IXFH36N60P Information
- Electrical Vehicle DC Fast Chargers
- DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
- HiPerFETâ„¢ Power MOSFETs
- IXYS Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Specifications
| RoHS: | Y |
|---|---|
| Packaging: | Tube |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Configuration: | Single |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Subcategory: | MOSFETs |
| Product Type: | MOSFET |
| Product Category: | MOSFET |
| Manufacturer: | IXYS |
| Brand: | IXYS |
| Series: | IXFH36N60 |
| Tradename: | HiPerFET |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 80 ns |
| Pd - Power Dissipation: | 650 W |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Width: | 5.3 mm |
| Forward Transconductance - Min: | 39 S |
| Id - Continuous Drain Current: | 36 A |
| Typical Turn-On Delay Time: | 30 ns |
| Vgs - Gate-Source Voltage: | 30 V |
| Factory Pack Quantity: | 30 |
| Rise Time: | 25 ns |
| Fall Time: | 22 ns |
| Height: | 21.46 mm |
| Rds On - Drain-Source Resistance: | 190 mOhms |
| Length: | 16.26 mm |
| Transistor Type: | 1 N-Channel |
| Number of Channels: | 1 Channel |
| Unit Weight: | 0.229281 oz |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
IXFH36N60P Price & Stock
IXYS IXFH36N60P pricing and available inventory.
| Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
|---|---|---|---|---|---|---|---|---|
| Digi-Key | IXFH36N60P-ND | 119 | 12.38 | 11.18 | 8.84 | 7.02 | 6.40 | 2020-03-17T13:02:28Z |
| RS Components | 194467 | 621 | 13.61 | 13.60 | 11.43 | 9.70 | 9.70 | 2020-03-18T21:10:26Z |
| RS Components | 194467P | - | - | 13.60 | 11.43 | 9.70 | 9.70 | 2020-03-18T21:10:26Z |
| RS Components | 9200763 | - | - | - | 11.42 | 9.41 | 9.41 | 2020-03-18T21:10:26Z |
| Mouser | 747-IXFH36N60P | 809 | 12.38 | 12.38 | 10.16 | 8.07 | 6.92 | 2020-03-18T14:04:40Z |
| element14 APAC | 1427299 | 42 | 13.11 | 11.85 | 9.37 | 9.37 | 9.37 | 2020-03-12T13:48:22Z |
| Farnell | 1427299 | 78 | 12.42 | 10.18 | 8.17 | 6.68 | 6.68 | 2020-03-18T01:44:10Z |
| Newark | 58M7600 | 42 | 12.38 | 11.63 | 10.16 | 8.46 | 8.46 | 2020-03-18T14:04:41Z |
| Sourceability | IXFH36N60P | 60 | - | - | - | - | - | 2020-03-03T19:24:07Z |
| Quest | IXFH36N60P | 219 | 15.56 | 7.78 | 6.74 | 6.22 | 6.22 | 2020-03-18T11:21:50Z |
| TME | IXFH36N60P | 60 | 10.58 | 8.41 | 7.56 | 7.56 | 7.56 | 2020-03-18T11:04:05Z |
| Abacus Technologies | IXFH36N60P | 30 | - | - | - | - | - | 2020-02-24T20:07:32Z |
| Sierra IC | IXFH36N60P | Contact | - | - | - | - | - | 2020-03-06T17:01:28Z |
| North Star Micro | IXFH36N60P | Contact | - | - | - | - | - | 2015-05-20T05:52:12Z |
Alternate Names
IXYS has several brands around the world that may have alternate names for IXFH36N60P due to regional differences or acquisition. IXFH36N60P may also be known as the following names:
- IXYS CORPORATION IXFH36N60P
- IXY IXFH36N60P
- IXYS CORP IXFH36N60P
- IXYS SEMICONDUCTOR IXFH36N60P
- IXYS Integrated Circuits Division IXFH36N60P
- IXYS Integrated Circuits/Clare IXFH36N60P
- IXYS GMBH IXFH36N60P
- IXYS-DIRECTED ENERGY IXFH36N60P
- IXYS Integrated Circuits Division Inc IXFH36N60P
- IXYS SEMICONDUCTOR GMBH IXFH36N60P
- IXYS (VA) IXFH36N60P
- IXYS CORPO IXFH36N60P
- IXYS Semiconducter GmbH IXFH36N60P
- IXYS SEMICONDUCTOR CORP IXFH36N60P
- IXYS INTEGCIRCUITS DIV(CLARE) IXFH36N60P
- IXYS Colorado (IXYS RF Division) IXFH36N60P
- IXYS SEMICOND IXFH36N60P
- IXYS Integrated Circuits IXFH36N60P
- Zilog/IXYS IXFH36N60P
- IXYSCOR IXFH36N60P
- Clare/LXYS Corporation IXFH36N60P
- IXYS-RF IXFH36N60P
- CP CLAIRE IXFH36N60P
- Clare (IXYS) IXFH36N60P
- IXYS CORPORATION|V IXFH36N60P